4n32, 4n33 www.vishay.com vishay semiconductors rev. 1.2, 15-feb-11 1 document number: 81865 for technical questions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 optocoupler, photodarlington output, high gain, with base connection description the 4n32 and 4n33 are optically coupled isolators with a gallium arsenide infrared led and a solicon photodarlington sensor. switching can be achieved while maintaining a high degree of isolation between drivi ng and load circuits. these optocouplers can be used to replace reed and mercury relays with advantages of long life, high speed switching and elimination of magnetic fields. features ? very high current transfer ratio, 500 % min. ? high isolation resistance, 10 11 typical ? standard plastic dip package ? material categorization: for definitions of co mpliance please see www.vishay.com/doc?99912 agency approvals ? ul1577, file no. e5 2744 system code h ? din en 60747-5-2 (vde 0884) / din en 60747-5-5 (pending), available with option 1 ? bsi iec 60950; iec 60065 ?fimko notes ? additional options may be possib le, please contact sales office (1) also available in tubes, do not put t on the end i179005_1 1 2 3 6 5 4 b c e a c nc v de i179005 ordering information 4n3#-x0##t part number package option tape and reel agency certified/package ctr (%) ul, bsi, fimko 500 500 dip-6 4n32 4n33 dip-6, 400 mil, option 6 4n32-x006 - smd-6, option 7 4n32-x007t (1) 4n33-x007t (1) smd-6, option 9 4n32-x009t (1) 4n33-x009t (1) vde, ul, bsi, fimko 500 500 dip-6 4n32-x001 4N33-X001 smd-6, option 7 4n32-x017t 4n33-x017t (1) > 0.1 mm 10.16 mm > 0.7 mm 7.62 mm dip option 7 option 6 option 9
4n32, 4n33 www.vishay.com vishay semiconductors rev. 1.2, 15-feb-11 2 document number: 81865 for technical questions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes ? stresses in excess of the absolu te maximum ratings can ca use permanent damage to the device. functional operation of the devic e is not implied at these or any other conditions in excess of those give n in the operational sections of this document. exposure to abs olute maximum ratings for extended periods of th e time can adversely affect reliability. (1) refer to reflow profile for soldering conditions for surface mount ed devices (smd). refer to wave profile for soldering conditi ons for through hole devices (dip). notes ? minimum and maximum values are testing requirements. typical values are characteristics of the device and are the result of en gineering evaluation. typical values are for information only and are not part of the testing requirements (1) indicates jedec ? registered values absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit input reverse voltage v r 3v forward current i f 60 ma power dissi pation p diss 100 mw derate linearly fr om 55 c 1.33 mw/c output collector emitter breakdown voltage bv ceo 30 v emitter base brea kdown voltage bv ebo 8v collector base br eakdown voltage bv cbo 50 v emitter collector breakdown voltage bv eco 5v collector (load) current i c 100 ma power dissi pation p diss 150 mw derate linearly 2mw/c coupler total dissipation p tot 250 mw derate linearly 3.3 mw/c isolation test voltage (between emitter 1 s v iso 5300 v rms leakage path 7mm min. air path 7mm min. isolation resistance v io = 500 v, t amb = 25 c r io 10 12 v io = 500 v, t amb = 100 c r io 10 11 storage temperature t stg -55 to +150 c operating temperature t amb -55 to +100 c lead soldering time (1) at 260 c 10 s electrical characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit input forward voltage i f = 50 ma v f - 1.25 1.5 v reverse current v r = 3 v i r - 0.1 100 a capacitance v r = 0 v c o -25 pf output collector emitter breakdown voltage (1) i c = 100 a, i f = 0 bv ceo 30 - - v collector base br eakdown voltage (1) i c = 100 a, i f = 0 bv cbo 50 - - v emitter base br eakdown voltage (1) i c = 100 a, i f = 0 bv ebo 8--v emitter collector breakdown voltage (1) i c = 100 a, i f = 0 bv eco 510- v collector emitter leakage current v ce = 10 v, i f = 0 i ceo - 1 100 na i c = 0.5 ma, v ce = 5 v h fe 13 - - coupler collector emitter sa turation voltage v cesat -1-v coupling capa citance - 1.5 - pf
4n32, 4n33 www.vishay.com vishay semiconductors rev. 1.2, 15-feb-11 3 document number: 81865 for technical questions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note ? as per iec 60747-5-2, 7.4.3.8.1, this opto coupler is suitable for saf e electrical insulation only within the safety rating s. compliance with the safety ratings shall be ensure d by means of pr otective circuits typical characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - normalized non-sa turated and saturated ctr ce vs. led current fig. 2 - normalized non-saturate d and saturated collector emitter current vs. led current current transfer ratio parameter test condition symbol min. typ. max. unit current transfer ratio v ce = 10 v, i f = 10 ma ctr 500 - - % switching char acteristics parameter test condition symbol min. typ. max. unit turn-on time v cc = 10 v, i c = 50 ma t on --5s turn-off time i f = 200 ma, r l = 180 t off - - 100 s safety and insulation ratings parameter test condition symbol min. typ. max. unit climatic classification (according to iec 68 part 1) - 55 / 100 / 21 - comparative tracking index cti 175 - 399 v iotm 8000 - - v v iorm 890 - - v p so --700mw i si --400ma t si --175c creepage distance standard dip-6 7 - - mm clearance distance standard dip-6 7 - - mm creepage distance 400 mil dip-6 8 - - mm clearance distance 400 mil dip-6 8 - - mm insulation thickness, reinforced rated per iec 60950 2.10.5.1 0.4 - - mm i4n32-33_02 0.1 1 10 100 1000 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v ce = 5 v i f - led current (ma) nctr ce - normalized ctr ce v ce = 5 v i f = 10 ma t a = 25 c normalized to: v ce = 1 v i4n32-33_03 100 1 0.1 0.001 0.01 0.1 1 10 i f - led current (ma) ni ce - normalized i ce 10 v ce = 5 v i f = 10 ma t a = 25 c normalized to: v ce = 5 v v ce = 1 v
4n32, 4n33 www.vishay.com vishay semiconductors rev. 1.2, 15-feb-11 4 document number: 81865 for technical questions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - normalized collector base photocurrent vs. led current fig. 4 - non-saturated and saturated h fe vs. base current fig. 5 - low to high propagation delay vs. collector load resistance and led current fig. 6 - high to low propagation delay vs. collector load resistance and led current fig. 7 - switching waveform and switching schematic i4n32-33_04 0.1 1 10 100 0.001 0.01 0.1 1 10 i f = led current (ma) ni cb - normalized i cb v cb = 3.5 v i f = 10 ma t a = 25 c normalized to: i4n32-33_05 0.01 0.1 1 10 100 0 2000 4000 6000 8000 10 000 v ce = 5 v v ce = 1 v i b - base current (a) h fe - forward transfer gain t a = 25 c i4n32-33_06 0101520 0 20 40 60 80 t a = 25 c, v cc = 5 v v th = 1.5 v i f - led current (ma) t plh - low/high propagation delay (s) 1 k 5 220 470 100 i4n32-33_07 0101520 0 5 10 15 20 i f - led current (ma) t a = 25 c v cc = 5 v v th = 1.5 v t phl - high/low propagation delay (s) 1 k 100 5 i4n32-33_08 i f t r v o t d t s t f t phl t plh v th = 1.5 v r l v cc i f v o
4n32, 4n33 www.vishay.com vishay semiconductors rev. 1.2, 15-feb-11 5 document number: 81865 for technical questions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package dimensions in millimeters dip-6 package dimensions package marking notes ? example marking for 4n32-x017t ? only options 1, and 7 reflected in the package marking ? the vde logo is only marked on option 1 parts ? tape and reel suffix (t) is not part of the package marking i178004 0.25 typ. 2.95 0.5 3.555 0.255 0.8 min. 7.62 typ. 0.85 0.05 2.54 typ. 1 min. 0.5 0.05 6.4 0.1 8.6 0.1 pin one id 6 5 4 1 2 3 18 3 to 9 7.62 to 8.81 4 typ. i s o method a 1.2 0.1 option 6 option 7 20802-24 option 9 10.16 typ. 7.62 typ. 8 min. 7.62 typ. 4.3 0.3 0.6 min. 10.3 max. 0.7 min. 10.3 max. 7.62 typ. 8 min. 0.6 min. 0.1 0.1 3.6 0.3 3.5 0.3 0.1 min. 2.54 r 0.25 1.78 0.76 1.52 8 min. 11.05 2.54 r 0.25 1.78 0.76 1.52 8 min. 11.05 2.55 0.25 21764-18 4n32 -x017 v yww h 68
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